IXTH42N20MA
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTH42N20MA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 42
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO247
IXTH42N20MA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTH42N20MA
Datasheet (PDF)
5.1. Size:378K ixys
ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf 
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine
9.1. Size:113K ixys
ixth48n65x2.pdf
Advance Technical InformationX2-Class VDSS = 650VIXTH48N65X2Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement ModeAvalanche RatedTO-247GDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS = Source Tab = DrainVGSS Continu
9.2. Size:107K ixys
ixth35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra
9.3. Size:187K ixys
ixth440n055t2 tt440n055t2.pdf
Advance Technical InformationTrenchT2TM VDSS = 55VIXTH440N055T2ID25 = 440APower MOSFETIXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C, RGS = 1M 55 VVGSS Continuous
9.4. Size:154K ixys
ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
9.5. Size:156K ixys
ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
9.6. Size:114K ixys
ixth48n15.pdf
Advance Technical InformationIXTH 48N15 VDSS = 150 VHigh CurrentIXTT 48N15 ID25 = 48 APower MOSFET RDS(on) = 32 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 M 150 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C48 AIDM TC =
9.7. Size:111K ixys
ixtp450p2 ixth450p2 ixtq450p2.pdf
Advance Technical InformationPolarP2TM VDSS = 500VIXTP450P2ID25 = 16APower MOSFETIXTQ450P2 RDS(on) 330m IXTH450P2trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedTO-220AB (IXTP)Fast Intrinsic DiodeGDTabSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RG
9.8. Size:55K ixys
ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra
9.9. Size:111K ixys
ixth4n100l.pdf
Advance Technical InformationLinearTM Power MOSFET VDSS = 1000VIXTH4N100LID25 = 4Aw/Extended FBSOA RDS(on) 2.8 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1000 V S = Source Tab = DrainVDGR TJ = 25C to 150
9.10. Size:211K inchange semiconductor
ixth40n50l2.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH40N50L2FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
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