IXTH5N100A Specs and Replacement
Type Designator: IXTH5N100A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO247
IXTH5N100A substitution
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IXTH5N100A datasheet
ixth5n100-a ixtm5n100-a.pdf
VDSS ID25 RDS(on) Standard IXTH / IXTM 5N100 1000 V 5 A 2.4 Power MOSFET IXTH / IXTM 5N100A 1000 V 5 A 2.0 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 ... See More ⇒
ixth500n04t2 ixtt500n04t2.pdf
Advance Technical Information TrenchT2TM VDSS = 40V IXTH500N04T2 ID25 = 500A Power MOSFET IXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V VDGR TJ = 25 C to 175 C, RGS = 1M 40 V TO-268 (IXTT) VGSM T... See More ⇒
ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf
PolarPTM VDSS = - 100V IXTA52P10P ID25 = - 52A Power MOSFETs IXTP52P10P RDS(on) 50m IXTQ52P10P P-Channel Enhancement Mode Avalanche Rated IXTH52P10P TO-3P (IXTQ) TO-263 AA (IXTA) TO-220AB (IXTP) D G G G S D G S S D (Tab) D D (Tab) S Tab Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 2... See More ⇒
ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf
IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET RDS(on) 60m N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒
Detailed specifications: IXTH40N30, IXTH42N15MA, IXTH42N15MB, IXTH42N20, IXTH42N20MA, IXTH42N20MB, IXTH50N20, IXTH5N100, K3569, IXTH67N08MA, IXTH67N08MB, IXTH67N10, IXTH67N10MA, IXTH67N10MB, IXTH68N20, IXTH6N80, IXTH6N80A
Keywords - IXTH5N100A MOSFET specs
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