All MOSFET. SM7301DSK Datasheet

 

SM7301DSK MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM7301DSK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP-8

 SM7301DSK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM7301DSK Datasheet (PDF)

 ..1. Size:263K  sino
sm7301dsk.pdf

SM7301DSK SM7301DSK

SM7301DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 30V/12A,D2 RDS(ON)= 10m (max.) @ VGS= 10V RDS(ON)= 15.5m (max.) @ VGS= 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Notebook

 9.1. Size:351K  sino
sm7305eskp.pdf

SM7301DSK SM7301DSK

SM7305ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 230V/50A,DUAL DFN5x6-8RDS(ON) = 3.3m (max.) @ VGS =10VRDS(ON) = 5.2m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG1 (1) Lead Free Availabl

 9.2. Size:266K  sino
sm7307dskp.pdf

SM7301DSK SM7301DSK

SM7307DSKPDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/35A,D2D2RDS(ON) = 8.4m (max.) @ VGS = 10V D1D1RDS(ON) = 11.4m (max.) @ VGS = 4.5VPin 1 100% UIS + Rg TestedS2G2S1G1 ESD ProtectionDFN5x6C-8_EP2 Reliable and Rugged Lead Free Available (RoHS Compliant)D1 D1 D2 D2Applications Power Management in Notebook Computer,G1 G2 Portable E

 9.3. Size:421K  sino
sm7304eskp.pdf

SM7301DSK SM7301DSK

SM7304ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/27A,G2S2RDS(ON) = 14m (max.) @ VGS = 10VRDS(ON) = 19.5m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 7.4m (max.) @ VGS =10VRDS(ON) = 11.8m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and Rug

 9.4. Size:383K  sino
sm7303eskp.pdf

SM7301DSK SM7301DSK

SM7303ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 5m (max.) @ VGS =10VRDS(ON) = 6.5m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG

 9.5. Size:311K  sino
sm7308cskp.pdf

SM7301DSK SM7301DSK

SM7308CSKPDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel (Integrated Schottky Diode)D230V/24A, D1D2D1RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 32.5m (max.) @ VGS = 4.5V G2Pin 1S2G1 P ChannelS1-30V/-19.8A,DFN5x6C-8_EP2RDS(ON) = 30m (max.) @ VGS =-10VRDS(ON) = 46m (max.) @ VGS =-4.5V (8) (7) (6) (5)D1 D1 D2 D2 100% UIS +

 9.6. Size:351K  sino
sm7306eskp.pdf

SM7301DSK SM7301DSK

SM7306ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 230V/50A, DUAL DFN5x6-8RDS(ON) = 4m (max.) @ VGS =10VRDS(ON) = 5.3m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG1 (1) Lead Free Available (

 9.7. Size:367K  sino
sm7302eskp.pdf

SM7301DSK SM7301DSK

SM7302ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 4m (max.) @ VGS =10VRDS(ON) = 5.9m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG

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