VN0104N3 PDF and Equivalents Search

 

VN0104N3 Specs and Replacement

Type Designator: VN0104N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-92

VN0104N3 substitution

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VN0104N3 datasheet

 ..1. Size:62K  njs
 vn0104n2 vn0104n3 vn0104n5 vn0104n6 vn0104n7 vn0104n9 vn0104nd vn0106n2 vn0106n3 vn0106n5 vn0106n6 vn0106n7 vn0106n9 vn0106nd vn0109n2 vn0109n3 vn0109n5 vn0109n9 vn0109nd.pdf pdf_icon

VN0104N3

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 8.1. Size:588K  supertex
 vn0104.pdf pdf_icon

VN0104N3

Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒

 9.1. Size:51K  njs
 zvn0106a.pdf pdf_icon

VN0104N3

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 9.2. Size:587K  supertex
 vn0106.pdf pdf_icon

VN0104N3

Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒

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Detailed specifications: MPF6660 , MPF6661 , MPF930 , MPF960 , MPF990 , VEC2315 , VEC2616 , VN0104N2 , IRF3205 , VN0104N5 , VN0104N6 , VN0104N7 , VN0104N9 , VN0104ND , VN0106N2 , VN0106N3 , VN0106N5 .

Keywords - VN0104N3 MOSFET specs

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