IXTH67N10MA Specs and Replacement

Type Designator: IXTH67N10MA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO247

IXTH67N10MA substitution

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IXTH67N10MA datasheet

 5.1. Size:579K  ixys
ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTH67N10MA

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30 ... See More ⇒

 9.1. Size:128K  ixys
ixth68n20 ixtk74n20.pdf pdf_icon

IXTH67N10MA

VDSS ID25 RDS(on) High Current IXTK 74 N20 200 V 74 A 35 mW MegaMOSTMFET IXTH 68 N20 200 V 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-247AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 200 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 74N20 74 A 68N20 68 A TO-264 AA (I... See More ⇒

 9.2. Size:206K  ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf pdf_icon

IXTH67N10MA

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .... See More ⇒

 9.3. Size:167K  ixys
ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf pdf_icon

IXTH67N10MA

Advance Technical Information LinearL2TM Power VDSS = 100V IXTA64N10L2 MOSFETs w/Extended ID25 = 64A IXTP64N10L2 RDS(on) 32m FBSOA IXTH64N10L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C... See More ⇒

Detailed specifications: IXTH42N20MA, IXTH42N20MB, IXTH50N20, IXTH5N100, IXTH5N100A, IXTH67N08MA, IXTH67N08MB, IXTH67N10, SKD502T, IXTH67N10MB, IXTH68N20, IXTH6N80, IXTH6N80A, IXTH6N90, IXTH6N90A, IXTH75N10, IXTH7P50

Keywords - IXTH67N10MA MOSFET specs

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