IXTH6N80 Specs and Replacement

Type Designator: IXTH6N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO247

IXTH6N80 substitution

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IXTH6N80 datasheet

 0.1. Size:102K  ixys
 ixth6n80-a ixtm6n80-a.pdf pdf_icon

IXTH6N80

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A TO... See More ⇒

 8.1. Size:206K  ixys
 ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf pdf_icon

IXTH6N80

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .... See More ⇒

 8.2. Size:104K  ixys
 ixth6n90-a ixtm6n90-a.pdf pdf_icon

IXTH6N80

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C6 A T... See More ⇒

 8.3. Size:588K  ixys
 ixth6n120 ixtt6n120.pdf pdf_icon

IXTH6N80

IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET RDS(on) = 2.6 N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A... See More ⇒

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Detailed specifications: IXTH5N100, IXTH5N100A, IXTH67N08MA, IXTH67N08MB, IXTH67N10, IXTH67N10MA, IXTH67N10MB, IXTH68N20, AON7410, IXTH6N80A, IXTH6N90, IXTH6N90A, IXTH75N10, IXTH7P50, IXTH8P50, IXTK21N100, IXTK33N45

Keywords - IXTH6N80 MOSFET specs

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