VN2210N2 Specs and Replacement

Type Designator: VN2210N2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-39

VN2210N2 substitution

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VN2210N2 datasheet

 8.1. Size:650K  supertex
 vn2210.pdf pdf_icon

VN2210N2

Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VN2210 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produ... See More ⇒

Detailed specifications: VN10LLS, VN10LM, VN1206, VN1304, VN1306, VN1310, VN2106, VN2110, IRFB3607, VN2210N3, VN2222KM, VN2222LLG, VN2222LM, VN2224, VN2406, VN2406D, VN2406L

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