All MOSFET. IXTH6N80A Datasheet

 

IXTH6N80A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH6N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO247

 IXTH6N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH6N80A Datasheet (PDF)

 6.1. Size:102K  ixys
 ixth6n80-a ixtm6n80-a.pdf

IXTH6N80A IXTH6N80A

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C6 ATO

 8.1. Size:206K  ixys
 ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf

IXTH6N80A IXTH6N80A

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTA6N50D2MOSFET ID(on) > 6AIXTP6N50D2 RDS(on) 500m IXTH6N50D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ - 55 .

 8.2. Size:104K  ixys
 ixth6n90-a ixtm6n90-a.pdf

IXTH6N80A IXTH6N80A

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C6 AT

 8.3. Size:588K  ixys
 ixth6n120 ixtt6n120.pdf

IXTH6N80A IXTH6N80A

IXTH 6N120 VDSS = 1200 VHigh VoltageIXTT 6N120 ID25 = 6 APower MOSFET RDS(on) = 2.6 N-Channel Enhancement ModeAvalanche RatedPreliminary Data SheetTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C6 A

 8.4. Size:116K  ixys
 ixth6n150.pdf

IXTH6N80A IXTH6N80A

Advance Technical InformationHigh Voltage VDSS = 1500VIXTH6N150ID25 = 6APower MOSFET RDS(on) 3.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 20 VSVGSM Transient 30

 8.5. Size:184K  ixys
 ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf

IXTH6N80A IXTH6N80A

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTA6N100D2MOSFET ID(on) > 6AIXTP6N100D2 RDS(on) 2.2 IXTH6N100D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ -

Datasheet: IXTH5N100A , IXTH67N08MA , IXTH67N08MB , IXTH67N10 , IXTH67N10MA , IXTH67N10MB , IXTH68N20 , IXTH6N80 , CS150N03A8 , IXTH6N90 , IXTH6N90A , IXTH75N10 , IXTH7P50 , IXTH8P50 , IXTK21N100 , IXTK33N45 , IXTK33N50 .

 

 
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