IXTH6N90A Specs and Replacement

Type Designator: IXTH6N90A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO247

IXTH6N90A substitution

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IXTH6N90A datasheet

 6.1. Size:104K  ixys
ixth6n90-a ixtm6n90-a.pdf pdf_icon

IXTH6N90A

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C6 A T... See More ⇒

 8.1. Size:206K  ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf pdf_icon

IXTH6N90A

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .... See More ⇒

 8.2. Size:588K  ixys
ixth6n120 ixtt6n120.pdf pdf_icon

IXTH6N90A

IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET RDS(on) = 2.6 N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A... See More ⇒

 8.3. Size:116K  ixys
ixth6n150.pdf pdf_icon

IXTH6N90A

Advance Technical Information High Voltage VDSS = 1500V IXTH6N150 ID25 = 6A Power MOSFET RDS(on) 3.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 20 V S VGSM Transient 30... See More ⇒

Detailed specifications: IXTH67N08MB, IXTH67N10, IXTH67N10MA, IXTH67N10MB, IXTH68N20, IXTH6N80, IXTH6N80A, IXTH6N90, IRF1010E, IXTH75N10, IXTH7P50, IXTH8P50, IXTK21N100, IXTK33N45, IXTK33N50, IXTK74N20, IXTM10N100

Keywords - IXTH6N90A MOSFET specs

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