SMC3400 MOSFET Datasheet: N-Ch, 30V, 5A. Full specification with pinout and replacement list

SMC3400 Specs and Replacement

Type Designator: SMC3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42.1 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SOT-23L

SMC3400 substitution

- MOSFET ⓘ Cross-Reference Search

SMC3400 datasheet

..1. Size:361K semtron
smc3400.pdf pdf_icon

SMC3400 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3400 is the N-Channel logic enhancement 30V/5A, RDS(ON) =25m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4A, RDS(ON) =28m (typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3A, RDS(ON) =37m (typ.)@VGS =2.5V provide excellent RDS(ON).lo... See More ⇒

8.1. Size:369K semtron
smc3407.pdf pdf_icon

SMC3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design ... See More ⇒

8.2. Size:372K semtron
smc3401.pdf pdf_icon

SMC3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ)@VGS =-2.5V provide excelle... See More ⇒

8.3. Size:907K cn vbsemi
smc3407s.pdf pdf_icon

SMC3407S www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23... See More ⇒

Detailed specifications: SM9993DSQG, SM9A01NSF, SM9A01NSFP, SMC2333, SMC2342A, SMC2360, SMC3054, SMC3056, IRLB3034, SMC3401, SMC3407, SMC3414, SMC3415A, SMC3535, SMC4420, SMC4428, SMC4738