IXTH8P50 Specs and Replacement

Type Designator: IXTH8P50

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO247

IXTH8P50 substitution

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IXTH8P50 datasheet

 ..1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH8P50

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w... See More ⇒

 ..2. Size:515K  ixys
 ixth8p50 ixtt8p50.pdf pdf_icon

IXTH8P50

IXTH 8P50 VDSS = -500 V Standard Power IXTT 8P50 ID25 = -8 A MOSFET RDS(on) = 1.2 P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) ID25 TC = 25 C-8 A IDM TC = 25... See More ⇒

 9.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTH8P50

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK) ... See More ⇒

 9.2. Size:113K  ixys
 ixth80n65x2.pdf pdf_icon

IXTH8P50

Advance Technical Information X2-Class VDSS = 650V IXTH80N65X2 Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings D S D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G = Gate D = Drain S = Source Tab = Drain VGSS Contin... See More ⇒

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Detailed specifications: IXTH67N10MB, IXTH68N20, IXTH6N80, IXTH6N80A, IXTH6N90, IXTH6N90A, IXTH75N10, IXTH7P50, IRF530, IXTK21N100, IXTK33N45, IXTK33N50, IXTK74N20, IXTM10N100, IXTM10N90, IXTM11N80, IXTM12N100

Keywords - IXTH8P50 MOSFET specs

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