IXTK33N45 Specs and Replacement
Type Designator: IXTK33N45
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 635 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO264
IXTK33N45 substitution
- MOSFET ⓘ Cross-Reference Search
IXTK33N45 datasheet
ixtk33n50.pdf
IXTK 33N50 VDSS = 500 V High Current ID (cont) = 33 A MegaMOSTMFET RDS(on) = 0.17 N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G D ID25 TC = 25 C 33 A S IDM TC = 25 C, pulse ... See More ⇒
Detailed specifications: IXTH6N80, IXTH6N80A, IXTH6N90, IXTH6N90A, IXTH75N10, IXTH7P50, IXTH8P50, IXTK21N100, NCEP15T14, IXTK33N50, IXTK74N20, IXTM10N100, IXTM10N90, IXTM11N80, IXTM12N100, IXTM12N50A, IXTM12N90
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
