All MOSFET. IXTM11N80 Datasheet

 

IXTM11N80 Datasheet and Replacement


   Type Designator: IXTM11N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO204
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IXTM11N80 Datasheet (PDF)

 ..1. Size:98K  ixys
 ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf pdf_icon

IXTM11N80

VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11

 9.1. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTM11N80

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 9.2. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTM11N80

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 9.3. Size:64K  ixys
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IXTM11N80

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History: VBNC1303 | IRFS4010PBF

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