IXTM11N80 Specs and Replacement
Type Designator: IXTM11N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO204
IXTM11N80 substitution
- MOSFET ⓘ Cross-Reference Search
IXTM11N80 datasheet
ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf
VDSS ID25 RDS(on) IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFET IXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 11N80 11... See More ⇒
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf
VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒
Detailed specifications: IXTH7P50, IXTH8P50, IXTK21N100, IXTK33N45, IXTK33N50, IXTK74N20, IXTM10N100, IXTM10N90, AO4407, IXTM12N100, IXTM12N50A, IXTM12N90, IXTM13N80, IXTM14N80, IXTM15N60, IXTM20N60, IXTM21N50
Keywords - IXTM11N80 MOSFET specs
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