SMP3003-TL-1E
MOSFET. Datasheet pdf. Equivalent
Type Designator: SMP3003-TL-1E
Marking Code: MP3003
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 280
nC
trⓘ - Rise Time: 1000
nS
Cossⓘ -
Output Capacitance: 1000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO-263
SMP3003-TL-1E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMP3003-TL-1E
Datasheet (PDF)
..1. Size:201K onsemi
smp3003-dl-1e smp3003-tl-1e.pdf
Ordering number : ENA1655DSMP3003P-Channel Power MOSFEThttp://onsemi.com 75V, 100A, 8.0m , TO-263-2L/TO-263FeaturesTO-263 ON-resistance RDS(on)1=6.2m (typ.) 4V drive Input capacitance Ciss=13400pF (typ.)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --75 VGate to Source
6.1. Size:292K sanyo
smp3003-dl-e.pdf
SMP3003Ordering number : ENA1655BSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSMP3003ApplicationsFeatures ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --75
7.1. Size:399K sanyo
smp3003.pdf
SMP3003Ordering number : ENA1655ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSMP3003ApplicationsFeatures ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --75 VGat
7.2. Size:322K onsemi
smp3003.pdf
Ordering number : ENA1655DSMP3003P-Channel Power MOSFEThttp://onsemi.com 75V, 100A, 8.0m , TO-263-2L/TO-263FeaturesTO-263 ON-resistance RDS(on)1=6.2m (typ.) 4V drive Input capacitance Ciss=13400pF (typ.)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --75 VGate to Source
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