IXTM12N50A Specs and Replacement

Type Designator: IXTM12N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO204

IXTM12N50A substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTM12N50A datasheet

 ..1. Size:62K  ixys
ixth12n50a ixtm12n50a.pdf pdf_icon

IXTM12N50A

VDSS ID25 RDS(on) Standard IXTH 12 N50A 500 V 12 A 0.4 Power MOSFET IXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C12 A IDM TC ... See More ⇒

 7.1. Size:105K  ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTM12N50A

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

Detailed specifications: IXTK21N100, IXTK33N45, IXTK33N50, IXTK74N20, IXTM10N100, IXTM10N90, IXTM11N80, IXTM12N100, 4N60, IXTM12N90, IXTM13N80, IXTM14N80, IXTM15N60, IXTM20N60, IXTM21N50, IXTM24N50, IXTM35N30

Keywords - IXTM12N50A MOSFET specs

 IXTM12N50A cross reference

 IXTM12N50A equivalent finder

 IXTM12N50A pdf lookup

 IXTM12N50A substitution

 IXTM12N50A replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.