VNS009A Specs and Replacement

Type Designator: VNS009A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-3

VNS009A substitution

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VNS009A datasheet

 ..1. Size:291K  siliconix
 vns008a vns009a vnt008a vnt009a.pdf pdf_icon

VNS009A

VNS008A ... See More ⇒

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VNS009A

VNS008D ... See More ⇒

Detailed specifications: VN67AFD, VN67AK, VN89AB, VN90AB, VN98AK, VN99AK, VNS008A, VNS008D, IRFP064N, VNS009D, VNT008A, VNT008D, VNT009A, VNT009D, VP0104, VP0106, VP0109

Keywords - VNS009A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs