VNT009D Specs and Replacement

Type Designator: VNT009D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-220AB

VNT009D substitution

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VNT009D datasheet

 ..1. Size:285K  siliconix
 vns008d vns009d vnt008d vnt009d.pdf pdf_icon

VNT009D

VNS008D ... See More ⇒

 8.1. Size:291K  siliconix
 vns008a vns009a vnt008a vnt009a.pdf pdf_icon

VNT009D

VNS008A ... See More ⇒

Detailed specifications: VN99AK, VNS008A, VNS008D, VNS009A, VNS009D, VNT008A, VNT008D, VNT009A, IRF740, VP0104, VP0106, VP0109, VP0550, VP0808, VP1008CSM4, VP2106, VP2110

Keywords - VNT009D MOSFET specs

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