HAF2012S Specs and Replacement

Type Designator: HAF2012S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29000 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: LDPAK

HAF2012S substitution

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HAF2012S datasheet

 ..1. Size:229K  renesas
 haf2012l haf2012s.pdf pdf_icon

HAF2012S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:129K  renesas
 haf2011l haf2011s.pdf pdf_icon

HAF2012S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.1. Size:106K  renesas
 haf2007l haf2007s.pdf pdf_icon

HAF2012S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.2. Size:1501K  cn vbsemi
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HAF2012S

HAF2007-90S www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo... See More ⇒

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Detailed specifications: HAF1003S, HAF1004L, HAF1004S, HAF2007L, HAF2007S, HAF2011L, HAF2011S, HAF2012L, K3569, HAT1038RJ, HAT2028RJ, HAT2033RJ, HAT2038RJ, HAT2114RJ, HAT2126RP, HAT2153R, HAT2265H

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