HFB1N65S Specs and Replacement

Type Designator: HFB1N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 3 nC

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 13.5 Ohm

Package: TO-92

HFB1N65S substitution

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HFB1N65S datasheet

 ..1. Size:238K  semihow
 hfb1n65s.pdf pdf_icon

HFB1N65S

Dec 2012 BVDSS = 650 V RDS(on) typ HFB1N65S ID = 0.3 A 650V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

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 hfb1n60s.pdf pdf_icon

HFB1N65S

Sep 2009 BVDSS = 600 V RDS(on) typ HFB1N60S ID = 0.3 A 600V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 8.2. Size:185K  semihow
 hfb1n60f.pdf pdf_icon

HFB1N65S

Oct 2016 HFB1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant TO-92 Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Uni... See More ⇒

 9.1. Size:226K  semihow
 hfb1n70s.pdf pdf_icon

HFB1N65S

Dec 2012 BVDSS = 700 V RDS(on) typ HFB1N70S ID = 0.3 A 700V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.5 nC (Typ.) Extended Safe Operating Area... See More ⇒

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Detailed specifications: HCS12NK65V, HCS20NT60V, HCT7000M, HCT7000MTXV, HCU6N70S, HCU7NE70S, HFA9N90, HFB1N60S, IRF1407, HFB1N70S, HFD1N60S, HFD1N65S, HFD2N60, HFD2N60S, HFD2N60U, HFD2N65S, HFD2N65U

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs