IXTM35N30 Specs and Replacement

Type Designator: IXTM35N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO204

IXTM35N30 substitution

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IXTM35N30 datasheet

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 ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTM35N30

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFET IXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V VGSM Tra... See More ⇒

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IXTM35N30

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Detailed specifications: IXTM12N50A, IXTM12N90, IXTM13N80, IXTM14N80, IXTM15N60, IXTM20N60, IXTM21N50, IXTM24N50, AO3407, IXTM40N30, IXTM42N20, IXTM50N20, IXTM5N100, IXTM5N100A, IXTM67N10, IXTM6N80, IXTM6N80A

Keywords - IXTM35N30 MOSFET specs

 IXTM35N30 cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.