IXTM35N30 Datasheet and Replacement
Type Designator: IXTM35N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 650 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO204
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IXTM35N30 Datasheet (PDF)
ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SQ9407EY-T1 | CHM85A3PAGP | ALD1103DB | SML100L16 | TK7P65W | SFFX054Z
Keywords - IXTM35N30 MOSFET datasheet
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History: SQ9407EY-T1 | CHM85A3PAGP | ALD1103DB | SML100L16 | TK7P65W | SFFX054Z
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