IXTM35N30 Datasheet and Replacement
Type Designator: IXTM35N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 650 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO204
IXTM35N30 substitution
IXTM35N30 Datasheet (PDF)
ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra
Datasheet: IXTM12N50A , IXTM12N90 , IXTM13N80 , IXTM14N80 , IXTM15N60 , IXTM20N60 , IXTM21N50 , IXTM24N50 , 4N60 , IXTM40N30 , IXTM42N20 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A .
History: IPB65R115CFD7A | IPB60R210CFD7 | 2SK3850D | IPB70N12S3-11 | WM02P20G | 2SK1990 | KP980A
Keywords - IXTM35N30 MOSFET datasheet
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History: IPB65R115CFD7A | IPB60R210CFD7 | 2SK3850D | IPB70N12S3-11 | WM02P20G | 2SK1990 | KP980A
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