All MOSFET. IXTM35N30 Datasheet

 

IXTM35N30 Datasheet and Replacement


   Type Designator: IXTM35N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO204
 

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IXTM35N30 Datasheet (PDF)

 ..1. Size:55K  ixys
 ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTM35N30

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra

 9.1. Size:65K  ixys
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IXTM35N30

Datasheet: IXTM12N50A , IXTM12N90 , IXTM13N80 , IXTM14N80 , IXTM15N60 , IXTM20N60 , IXTM21N50 , IXTM24N50 , AO3407 , IXTM40N30 , IXTM42N20 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A .

History: SJMN380R60D | NCE65T900D

Keywords - IXTM35N30 MOSFET datasheet

 IXTM35N30 cross reference
 IXTM35N30 equivalent finder
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