All MOSFET. HFD2N90 Datasheet

 

HFD2N90 Datasheet and Replacement


   Type Designator: HFD2N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.6 Ohm
   Package: D-PAK
 

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HFD2N90 Datasheet (PDF)

 ..1. Size:246K  semihow
 hfd2n90.pdf pdf_icon

HFD2N90

Feb 2014BVDSS = 900 VRDS(on) typ HFD2N90/HFU2N90ID = 2.0 A900V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N90 HFU2N90 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.)

 9.1. Size:381K  semihow
 hfd2n60u hfu2n60u.pdf pdf_icon

HFD2N90

June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T

 9.2. Size:199K  semihow
 hfd2n60u.pdf pdf_icon

HFD2N90

Jan 2014BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty

 9.3. Size:257K  semihow
 hfd2n65s.pdf pdf_icon

HFD2N90

Mar 2010BVDSS = 650 VRDS(on) typ = 5.0 HFD2N65S / HFU2N65SID = 1.6 A650V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD2N65S HFU2N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.

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Datasheet: HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , HFD2N60U , HFD2N65S , HFD2N65U , HFD2N70S , IRFB31N20D , HFD3N80 , HFD4N50 , HFD5N40 , HFD5N50S , HFD5N50U , HFD5N60S , HFD5N60U , HFD5N65S .

History: FTK2N65P

Keywords - HFD2N90 MOSFET datasheet

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