All MOSFET. HFD5N50U Datasheet

 

HFD5N50U MOSFET. Datasheet pdf. Equivalent

Type Designator: HFD5N50U

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 63 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: D-PAK

HFD5N50U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFD5N50U Datasheet (PDF)

0.1. hfd5n50u.pdf Size:207K _semihow

HFD5N50U
HFD5N50U

Jan 2014 BVDSS = 500 V RDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (

7.1. hfd5n50s.pdf Size:276K _semihow

HFD5N50U
HFD5N50U

OCT 2009 BVDSS = 500 V RDS(on) typ HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N50S HFU5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC

 9.1. hfd5n40.pdf Size:199K _semihow

HFD5N50U
HFD5N50U

July 2005 BVDSS = 400 V RDS(on) typ HFD5N40 / HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N40 HFU5N40 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ

9.2. hfd5n65s.pdf Size:204K _semihow

HFD5N50U
HFD5N50U

Mar 2010 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65S / HFU5N65S ID = 4.0 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N65S HFU5N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

 9.3. hfd5n70s.pdf Size:169K _semihow

HFD5N50U
HFD5N50U

Jan 2013 BVDSS = 700 V RDS(on) typ HFD5N70S / HFU5N70S ID = 3.8 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N70S HFU5N70S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

9.4. hfd5n60s.pdf Size:205K _semihow

HFD5N50U
HFD5N50U

Sep 2009 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

 9.5. hfd5n60u.pdf Size:210K _semihow

HFD5N50U
HFD5N50U

Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

9.6. hfd5n70u.pdf Size:209K _semihow

HFD5N50U
HFD5N50U

Jan 2014 BVDSS = 700 V RDS(on) typ = 2.7 HFD5N70U / HFU5N70U ID = 3.6 A 700V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N70U HFU5N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

9.7. hfd5n65u.pdf Size:209K _semihow

HFD5N50U
HFD5N50U

Jan 2014 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65U / HFU5N65U ID = 3.6 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N65U HFU5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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