HFD6N65U Specs and Replacement
Type Designator: HFD6N65U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: D-PAK
HFD6N65U substitution
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HFD6N65U datasheet
hfd6n65u.pdf
Jan 2014 BVDSS = 650 V RDS(on) typ HFD6N65U / HFU6N65U ID = 4.8 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD6N65U HFU6N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC... See More ⇒
hfd6n60u.pdf
Jan 2014 BVDSS = 600 V RDS(on) typ HFD6N60U / HFU6N60U ID = 4.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD6N60U HFU6N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 n... See More ⇒
hfd6n70u.pdf
Jan 2014 BVDSS = 700 V RDS(on) typ HFD6N70U / HFU6N70U ID = 4.8 A 700V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD6N70U HFU6N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC... See More ⇒
Detailed specifications: HFD5N60S, HFD5N60U, HFD5N65S, HFD5N65U, HFD5N70S, HFD5N70U, HFD630, HFD6N60U, IRF830, HFD6N70U, HFD8N60U, HFD8N65U, HFD8N70U, HFH10N80, HFH11N90, HFH13N80, HFH18N50S
Keywords - HFD6N65U MOSFET specs
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