HFD8N70U Datasheet and Replacement
Type Designator: HFD8N70U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: D-PAK
- MOSFET Cross-Reference Search
HFD8N70U Datasheet (PDF)
hfd8n70u.pdf

Jan 2014BVDSS = 700 VRDS(on) typ = 1.3 HFD8N70U / HFU8N70U ID = 6.0 A700V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N70U HFU8N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC
hfd8n65u.pdf

Jan 2014BVDSS = 650 VRDS(on) typ HFD8N65U / HFU8N65U ID = 6.0 A650V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N65U HFU8N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 n
hfd8n60u.pdf

Jan 2014BVDSS = 600 VRDS(on) typ HFD8N60U / HFU8N60U ID = 6.0 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N60U HFU8N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 n
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: MTH13N45 | FDS6680S | AON6586 | ZXMP10A13FTA | H5N5012P | JCS8N60CB | UF830L-TM3-T
Keywords - HFD8N70U MOSFET datasheet
HFD8N70U cross reference
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History: MTH13N45 | FDS6680S | AON6586 | ZXMP10A13FTA | H5N5012P | JCS8N60CB | UF830L-TM3-T



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