All MOSFET. HFD8N70U Datasheet

 

HFD8N70U Datasheet and Replacement


   Type Designator: HFD8N70U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: D-PAK
 

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HFD8N70U Datasheet (PDF)

 ..1. Size:201K  semihow
 hfd8n70u.pdf pdf_icon

HFD8N70U

Jan 2014BVDSS = 700 VRDS(on) typ = 1.3 HFD8N70U / HFU8N70U ID = 6.0 A700V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N70U HFU8N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC

 9.1. Size:202K  semihow
 hfd8n65u.pdf pdf_icon

HFD8N70U

Jan 2014BVDSS = 650 VRDS(on) typ HFD8N65U / HFU8N65U ID = 6.0 A650V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N65U HFU8N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 n

 9.2. Size:203K  semihow
 hfd8n60u.pdf pdf_icon

HFD8N70U

Jan 2014BVDSS = 600 VRDS(on) typ HFD8N60U / HFU8N60U ID = 6.0 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N60U HFU8N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 n

Datasheet: HFD5N70S , HFD5N70U , HFD630 , HFD6N60U , HFD6N65U , HFD6N70U , HFD8N60U , HFD8N65U , HY1906P , HFH10N80 , HFH11N90 , HFH13N80 , HFH18N50S , HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 .

History: SFB083N80CC2 | SFB087N120C2

Keywords - HFD8N70U MOSFET datasheet

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