HFD8N70U Specs and Replacement
Type Designator: HFD8N70U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: D-PAK
HFD8N70U substitution
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HFD8N70U datasheet
hfd8n70u.pdf
Jan 2014 BVDSS = 700 V RDS(on) typ = 1.3 HFD8N70U / HFU8N70U ID = 6.0 A 700V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD8N70U HFU8N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC ... See More ⇒
hfd8n65u.pdf
Jan 2014 BVDSS = 650 V RDS(on) typ HFD8N65U / HFU8N65U ID = 6.0 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD8N65U HFU8N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 n... See More ⇒
hfd8n60u.pdf
Jan 2014 BVDSS = 600 V RDS(on) typ HFD8N60U / HFU8N60U ID = 6.0 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD8N60U HFU8N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 n... See More ⇒
Detailed specifications: HFD5N70S, HFD5N70U, HFD630, HFD6N60U, HFD6N65U, HFD6N70U, HFD8N60U, HFD8N65U, AON7403, HFH10N80, HFH11N90, HFH13N80, HFH18N50S, HFH19N60, HFH6N90, HFH7N80, HFI50N06
Keywords - HFD8N70U MOSFET specs
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