HFI50N06 Specs and Replacement

Type Designator: HFI50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: I2-PAK

HFI50N06 substitution

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HFI50N06 datasheet

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 hfi50n06 hfw50n06.pdf pdf_icon

HFI50N06

Nov 2009 BVDSS = 60 V RDS(on) = 18 m HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW50N06 HFI50N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operati... See More ⇒

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 hfi50n06a hfw50n06a.pdf pdf_icon

HFI50N06

Oct 2016 HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFI50N06A HFW50N06A Symbol TO-262 TO-263 D S ... See More ⇒

Detailed specifications: HFD8N70U, HFH10N80, HFH11N90, HFH13N80, HFH18N50S, HFH19N60, HFH6N90, HFH7N80, IRFP064N, HFI640, HFN6N70U, HFP10N60S, HFP10N60U, HFP10N65S, HFP10N65U, HFP10N80, HFP11N40

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