IXTM50N20 Specs and Replacement

Type Designator: IXTM50N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO204

IXTM50N20 substitution

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IXTM50N20 datasheet

 ..1. Size:111K  ixys
 ixth50n20 ixtm50n20.pdf pdf_icon

IXTM50N20

IXTH 50N20 VDSS = 200 V MegaMOSTMFET IXTM 50N20 ID25 = 50 A RDS(on) = 45 m N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C50 A TO-204 AE (IXTM) IDM TC = 25 C, pulse width limited b... See More ⇒

 ..2. Size:378K  ixys
 ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf pdf_icon

IXTM50N20

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒

 9.1. Size:104K  ixys
 ixth5n100-a ixtm5n100-a.pdf pdf_icon

IXTM50N20

VDSS ID25 RDS(on) Standard IXTH / IXTM 5N100 1000 V 5 A 2.4 Power MOSFET IXTH / IXTM 5N100A 1000 V 5 A 2.0 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 ... See More ⇒

Detailed specifications: IXTM14N80, IXTM15N60, IXTM20N60, IXTM21N50, IXTM24N50, IXTM35N30, IXTM40N30, IXTM42N20, IRF520, IXTM5N100, IXTM5N100A, IXTM67N10, IXTM6N80, IXTM6N80A, IXTM6N90, IXTM6N90A, IXTM75N10

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