All MOSFET. IXTM50N20 Datasheet

 

IXTM50N20 Datasheet and Replacement


   Type Designator: IXTM50N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 190 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO204
 

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IXTM50N20 Datasheet (PDF)

 ..1. Size:111K  ixys
 ixth50n20 ixtm50n20.pdf pdf_icon

IXTM50N20

IXTH 50N20 VDSS = 200 VMegaMOSTMFETIXTM 50N20 ID25 = 50 ARDS(on) = 45 mN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C50 ATO-204 AE (IXTM)IDM TC = 25C, pulse width limited b

 ..2. Size:378K  ixys
 ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf pdf_icon

IXTM50N20

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 9.1. Size:104K  ixys
 ixth5n100-a ixtm5n100-a.pdf pdf_icon

IXTM50N20

VDSS ID25 RDS(on)Standard IXTH / IXTM 5N100 1000 V 5 A 2.4 Power MOSFETIXTH / IXTM 5N100A 1000 V 5 A 2.0 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25

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