All MOSFET. HFP10N65U Datasheet

 

HFP10N65U MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFP10N65U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 164 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm
   Package: TO-220

 HFP10N65U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFP10N65U Datasheet (PDF)

 ..1. Size:201K  semihow
 hfp10n65u.pdf

HFP10N65U HFP10N65U

March 2013BVDSS = 650 VRDS(on) typ = 0.8 HFP10N65U ID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 6.1. Size:172K  semihow
 hfp10n65s.pdf

HFP10N65U HFP10N65U

March 2014BVDSS = 650 VRDS(on) typ HFP10N65SID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 7.1. Size:201K  semihow
 hfp10n60u.pdf

HFP10N65U HFP10N65U

Feb 2013BVDSS = 600 VRDS(on) typ = 0.67 HFP10N60U ID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

 7.2. Size:189K  semihow
 hfp10n60s.pdf

HFP10N65U HFP10N65U

Nov 2007BVDSS = 600 VRDS(on) typ HFP10N60SID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: YJL2305B | XP162A11 | FS10KM-9 | TMD2N65AZ

 

 
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