All MOSFET. HFP2N70S Datasheet

 

HFP2N70S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFP2N70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: TO-220F

 HFP2N70S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFP2N70S Datasheet (PDF)

 ..1. Size:191K  semihow
 hfp2n70s.pdf

HFP2N70S HFP2N70S

Dec 2009BVDSS = 700 VRDS(on) typ HFP2N70SID = 1.6 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS(

 9.1. Size:210K  shantou-huashan
 hfp2n60.pdf

HFP2N70S HFP2N70S

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25

 9.2. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf

HFP2N70S HFP2N70S

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 9.3. Size:191K  semihow
 hfp2n65u.pdf

HFP2N70S HFP2N70S

Nov 2013BVDSS = 650 VRDS(on) typ = 5 HFP2N65U ID = 2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

 9.4. Size:191K  semihow
 hfp2n65s.pdf

HFP2N70S HFP2N70S

Sep 2009BVDSS = 650 VRDS(on) typ HFP2N65SID = 1.8 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(O

 9.5. Size:192K  semihow
 hfp2n60u.pdf

HFP2N70S HFP2N70S

Nov 2013BVDSS = 600 VRDS(on) typ = HFP2N60U ID = 2 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

 9.6. Size:170K  semihow
 hfp2n60s.pdf

HFP2N70S HFP2N70S

March 2014BVDSS = 600 VRDS(on) typ HFP2N60SID = 2.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area L

 9.7. Size:212K  semihow
 hfp2n90.pdf

HFP2N70S HFP2N70S

Feb 2014BVDSS = 900 VRDS(on) typ HFP2N90ID = 2.2 A900V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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