All MOSFET. HFP4N90 Datasheet

 

HFP4N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: HFP4N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO-220

HFP4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HFP4N90 Datasheet (PDF)

1.1. hfp4n90.pdf Size:202K _update_mosfet

HFP4N90
HFP4N90

March 2014 BVDSS = 900 V RDS(on) typ HFP4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Low

5.1. hfp4n50.pdf Size:239K _update_mosfet

HFP4N90
HFP4N90

July 2005 BVDSS = 500 V RDS(on) typ HFP4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

5.2. hfp4n65.pdf Size:818K _shantou-huashan

HFP4N90
HFP4N90

 Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 5.3. hfp4n60.pdf Size:208K _shantou-huashan

HFP4N90
HFP4N90

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP4N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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