HFP5N60S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HFP5N60S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10.5
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package:
TO-220
HFP5N60S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFP5N60S
Datasheet (PDF)
..1. Size:172K semihow
hfp5n60s.pdf 
Aug 2007BVDSS = 600 VRDS(on) typ HFP5N60SID = 4.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(
7.1. Size:408K semihow
hfp5n60f hfs5n60f.pdf
Oct 2016HFP5N60F / HFS5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFP5N60F HFS5N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unle
7.2. Size:205K semihow
hfp5n60u.pdf
May 2012BVDSS = 600 VRDS(on) typ HFP5N60U ID = 4.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area L
8.1. Size:204K semihow
hfp5n65u.pdf
March 2013BVDSS = 650 VRDS(on) typ HFP5N65U ID = 4.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
8.2. Size:207K semihow
hfp5n65s.pdf
Oct 2009BVDSS = 650 VRDS(on) typ = 2.3 HFP5N65SID = 4.2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )
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