HFP5N60S Specs and Replacement

Type Designator: HFP5N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220

HFP5N60S substitution

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HFP5N60S datasheet

 ..1. Size:172K  semihow
 hfp5n60s.pdf pdf_icon

HFP5N60S

Aug 2007 BVDSS = 600 V RDS(on) typ HFP5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

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 hfp5n60f hfs5n60f.pdf pdf_icon

HFP5N60S

Oct 2016 HFP5N60F / HFS5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFP5N60F HFS5N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unle... See More ⇒

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 hfp5n60u.pdf pdf_icon

HFP5N60S

May 2012 BVDSS = 600 V RDS(on) typ HFP5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area L... See More ⇒

 8.1. Size:204K  semihow
 hfp5n65u.pdf pdf_icon

HFP5N60S

March 2013 BVDSS = 650 V RDS(on) typ HFP5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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Detailed specifications: HFP2N65U, HFP2N70S, HFP2N90, HFP3N80, HFP4N50, HFP4N90, HFP5N50S, HFP5N50U, IRFP250N, HFP5N60U, HFP5N65S, HFP5N65U, HFP5N70S, HFP6N60U, HFP6N65U, HFP6N70U, HFP6N90

Keywords - HFP5N60S MOSFET specs

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