All MOSFET. HFP6N60U Datasheet

 

HFP6N60U Datasheet and Replacement


   Type Designator: HFP6N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.66 Ohm
   Package: TO-220
 

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HFP6N60U Datasheet (PDF)

 ..1. Size:198K  semihow
 hfp6n60u.pdf pdf_icon

HFP6N60U

July 2012BVDSS = 600 VRDS(on) typ HFP6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:201K  semihow
 hfp6n65u.pdf pdf_icon

HFP6N60U

July 2012BVDSS = 650 VRDS(on) typ HFP6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 9.1. Size:184K  semihow
 hfp6n90.pdf pdf_icon

HFP6N60U

Dec 2005BVDSS = 900 VRDS(on) typ HFP6N90ID = 6.0 A900V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

 9.2. Size:197K  semihow
 hfp6n70u.pdf pdf_icon

HFP6N60U

March 2013BVDSS = 700 VRDS(on) typ = 1.8 HFP6N70U ID = 6.0 A700V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

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Datasheet: HFP4N90 , HFP5N50S , HFP5N50U , HFP5N60S , HFP5N60U , HFP5N65S , HFP5N65U , HFP5N70S , 12N60 , HFP6N65U , HFP6N70U , HFP6N90 , HFP730S , HFP730U , HFP8N60S , HFP8N60U , HFP8N65S .

History: QM3002V | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | NVMTS0D7N04C | AP60SL650AFI

Keywords - HFP6N60U MOSFET datasheet

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