HFP730U Specs and Replacement

Type Designator: HFP730U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220

HFP730U substitution

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HFP730U datasheet

 ..1. Size:202K  semihow
 hfp730u.pdf pdf_icon

HFP730U

Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 HFP730U ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

 8.1. Size:340K  shantou-huashan
 hfp730.pdf pdf_icon

HFP730U

Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3... See More ⇒

 8.2. Size:404K  semihow
 hfp730f hfs730f.pdf pdf_icon

HFP730U

Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 400 V Very Low Intrinsic Capacitances ID 6A Excellent Switching Characteristics RDS(on), Typ 0.8 100% Avalanche Tested Qg, Typ 13 nC RoHS Compliant HFP730F HFS730F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unless oth... See More ⇒

 8.3. Size:299K  semihow
 hfp730s.pdf pdf_icon

HFP730U

Nov 2013 BVDSS = 400 V RDS(on) typ HFP730S ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

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Detailed specifications: HFP5N65S, HFP5N65U, HFP5N70S, HFP6N60U, HFP6N65U, HFP6N70U, HFP6N90, HFP730S, AO3401, HFP8N60S, HFP8N60U, HFP8N65S, HFP8N65U, HFP8N70U, HFP9N50, HFS10N60S, HFS10N60U

Keywords - HFP730U MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.