HFP730U Datasheet and Replacement. Cross Reference Search

HFP730U Datasheet (PDF)

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Oct 2013BVDSS = 400 VRDS(on) typ = 0.75 HFP730U ID = 6.0 A400V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lowe

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Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3

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Dec 2016HFP730F / HFS730F400V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 400 V Very Low Intrinsic CapacitancesID 6A Excellent Switching CharacteristicsRDS(on), Typ 0.8 100% Avalanche TestedQg, Typ 13 nC RoHS CompliantHFP730F HFS730FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unless oth

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Nov 2013BVDSS = 400 VRDS(on) typ HFP730SID = 6.0 A400V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lowe

Datasheet: HFP5N65S , HFP5N65U , HFP5N70S , HFP6N60U , HFP6N65U , HFP6N70U , HFP6N90 , HFP730S , IRFP260 , HFP8N60S , HFP8N60U , HFP8N65S , HFP8N65U , HFP8N70U , HFP9N50 , HFS10N60S , HFS10N60U .