HFP8N60U Specs and Replacement

Type Designator: HFP8N60U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

HFP8N60U substitution

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HFP8N60U datasheet

 ..1. Size:197K  semihow
 hfp8n60u.pdf pdf_icon

HFP8N60U

August 2012 BVDSS = 600 V RDS(on) typ HFP8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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HFP8N60U

Dec 2006 BVDSS = 600 V RDS(on) typ HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O... See More ⇒

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 hfp8n65u.pdf pdf_icon

HFP8N60U

March 2013 BVDSS = 650 V RDS(on) typ HFP8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 8.2. Size:192K  semihow
 hfp8n65s.pdf pdf_icon

HFP8N60U

Sep 2009 BVDSS = 650 V RDS(on) typ HFP8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O... See More ⇒

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Detailed specifications: HFP5N70S, HFP6N60U, HFP6N65U, HFP6N70U, HFP6N90, HFP730S, HFP730U, HFP8N60S, IRFP260, HFP8N65S, HFP8N65U, HFP8N70U, HFP9N50, HFS10N60S, HFS10N60U, HFS10N65S, HFS10N65U

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