HFP8N65S Specs and Replacement

Type Designator: HFP8N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-220

HFP8N65S substitution

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HFP8N65S datasheet

 ..1. Size:192K  semihow
 hfp8n65s.pdf pdf_icon

HFP8N65S

Sep 2009 BVDSS = 650 V RDS(on) typ HFP8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O... See More ⇒

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HFP8N65S

March 2013 BVDSS = 650 V RDS(on) typ HFP8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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 hfp8n60u.pdf pdf_icon

HFP8N65S

August 2012 BVDSS = 600 V RDS(on) typ HFP8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 8.2. Size:194K  semihow
 hfp8n60s.pdf pdf_icon

HFP8N65S

Dec 2006 BVDSS = 600 V RDS(on) typ HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O... See More ⇒

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Detailed specifications: HFP6N60U, HFP6N65U, HFP6N70U, HFP6N90, HFP730S, HFP730U, HFP8N60S, HFP8N60U, 4435, HFP8N65U, HFP8N70U, HFP9N50, HFS10N60S, HFS10N60U, HFS10N65S, HFS10N65U, HFS10N80

Keywords - HFP8N65S MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.