All MOSFET. IXTM6N80A Datasheet

 

IXTM6N80A Datasheet and Replacement


   Type Designator: IXTM6N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO204
 

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IXTM6N80A Datasheet (PDF)

 6.1. Size:102K  ixys
ixth6n80-a ixtm6n80-a.pdf pdf_icon

IXTM6N80A

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C6 ATO

 8.2. Size:104K  ixys
ixth6n90-a ixtm6n90-a.pdf pdf_icon

IXTM6N80A

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C6 AT

Datasheet: IXTM35N30 , IXTM40N30 , IXTM42N20 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , K2611 , IXTM6N90 , IXTM6N90A , IXTM75N10 , IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB .

History: SSS8N60 | IXTM6N80 | NTD5802N | CED30P10 | BUK7830-30 | FRK264R | FDS8958AF085

Keywords - IXTM6N80A MOSFET datasheet

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