All MOSFET. HFS12N60U Datasheet

 

HFS12N60U Datasheet and Replacement


   Type Designator: HFS12N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220F
 

 HFS12N60U substitution

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HFS12N60U Datasheet (PDF)

 ..1. Size:158K  semihow
 hfs12n60u.pdf pdf_icon

HFS12N60U

July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60UID = 12 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

 6.1. Size:252K  semihow
 hfs12n60s.pdf pdf_icon

HFS12N60U

Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60SID = 12 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

 7.1. Size:806K  semihow
 hfs12n65sa.pdf pdf_icon

HFS12N60U

July 2021BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SAID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 41 nC (Typ.) Extended Safe Ope

 7.2. Size:240K  semihow
 hfs12n65s.pdf pdf_icon

HFS12N60U

Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

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Datasheet: HFP9N50 , HFS10N60S , HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S , AO4407 , HFS12N65S , HFS12N65U , HFS13N50S , HFS13N50U , HFS13N60U , HFS13N65U , HFS18N50U , HFS2N60 .

History: AP4543GEH-HF | NCE60N1K0I

Keywords - HFS12N60U MOSFET datasheet

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