HFS12N60U Specs and Replacement

Type Designator: HFS12N60U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO-220F

HFS12N60U substitution

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HFS12N60U datasheet

 ..1. Size:158K  semihow
hfs12n60u.pdf pdf_icon

HFS12N60U

July 2014 BVDSS = 600 V RDS(on) typ = 0.53 HFS12N60U ID = 12 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 6.1. Size:252K  semihow
hfs12n60s.pdf pdf_icon

HFS12N60U

Nov 2007 BVDSS = 600 V RDS(on) typ = 0.53 HFS12N60S ID = 12 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) E... See More ⇒

 7.1. Size:806K  semihow
hfs12n65sa.pdf pdf_icon

HFS12N60U

July 2021 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65SA ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 41 nC (Typ.) Extended Safe Ope... See More ⇒

 7.2. Size:240K  semihow
hfs12n65s.pdf pdf_icon

HFS12N60U

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65S ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) E... See More ⇒

Detailed specifications: HFP9N50, HFS10N60S, HFS10N60U, HFS10N65S, HFS10N65U, HFS10N80, HFS11N40, HFS12N60S, IRF530, HFS12N65S, HFS12N65U, HFS13N50S, HFS13N50U, HFS13N60U, HFS13N65U, HFS18N50U, HFS2N60

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