HFS12N65S Specs and Replacement

Type Designator: HFS12N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: TO-220F

HFS12N65S substitution

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HFS12N65S datasheet

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 hfs12n65s.pdf pdf_icon

HFS12N65S

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65S ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) E... See More ⇒

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 hfs12n65sa.pdf pdf_icon

HFS12N65S

July 2021 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65SA ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 41 nC (Typ.) Extended Safe Ope... See More ⇒

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 hfs12n65js.pdf pdf_icon

HFS12N65S

Mar. 2023 HFS12N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 12 A Excellent Switching Characteristics RDS(on), Typ 0.7 100% Avalanche Tested Qg, Typ 44.4 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum ... See More ⇒

 6.2. Size:158K  semihow
 hfs12n65u.pdf pdf_icon

HFS12N65S

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65U ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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Detailed specifications: HFS10N60S, HFS10N60U, HFS10N65S, HFS10N65U, HFS10N80, HFS11N40, HFS12N60S, HFS12N60U, CS150N03A8, HFS12N65U, HFS13N50S, HFS13N50U, HFS13N60U, HFS13N65U, HFS18N50U, HFS2N60, HFS2N60S

Keywords - HFS12N65S MOSFET specs

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