All MOSFET. IXTM6N90 Datasheet

 

IXTM6N90 Datasheet and Replacement


   Type Designator: IXTM6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO204
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IXTM6N90 Datasheet (PDF)

 0.1. Size:104K  ixys
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IXTM6N90

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C6 AT

 8.1. Size:63K  ixys
 ixtm6n60 ixtm6n60a ixtp6n60 ixtp6n60a.pdf pdf_icon

IXTM6N90

 8.2. Size:102K  ixys
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IXTM6N90

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C6 ATO

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Datasheet: IXTM40N30 , IXTM42N20 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A , 75N75 , IXTM6N90A , IXTM75N10 , IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB , IXTP1N100 .

History: APQ5ESN40AF | FDPF18N20FT | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - IXTM6N90 MOSFET datasheet

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