HFS2N65S Specs and Replacement

Type Designator: HFS2N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO-220F

HFS2N65S substitution

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HFS2N65S datasheet

 ..1. Size:182K  semihow
 hfs2n65s.pdf pdf_icon

HFS2N65S

Sep 2009 BVDSS = 650 V RDS(on) typ HFS2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 7.1. Size:302K  semihow
 hfs2n65u.pdf pdf_icon

HFS2N65S

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFS2N65U ID = 2 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Typ.) Extended Safe Operating Area Lower ... See More ⇒

 8.1. Size:150K  semihow
 hfs2n60.pdf pdf_icon

HFS2N65S

July 2005 BVDSS = 600 V RDS(on) typ HFS2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 8.2. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf pdf_icon

HFS2N65S

Oct 2016 HFP2N60F / HFS2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFP2N60F HFS2N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

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Detailed specifications: HFS13N50S, HFS13N50U, HFS13N60U, HFS13N65U, HFS18N50U, HFS2N60, HFS2N60S, HFS2N60U, IRF1407, HFS2N65U, HFS2N70S, HFS2N90, HFS3N80, HFS4N50, HFS4N60, HFS4N90, HFS50N06

Keywords - HFS2N65S MOSFET specs

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