HFS8N70U Specs and Replacement

Type Designator: HFS8N70U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-220F

HFS8N70U substitution

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HFS8N70U datasheet

 ..1. Size:307K  semihow
 hfs8n70u.pdf pdf_icon

HFS8N70U

March 2013 BVDSS = 700 V RDS(on) typ = 1.3 HFS8N70U ID = 7.5 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 7.1. Size:183K  semihow
 hfs8n70s.pdf pdf_icon

HFS8N70U

Dec 2012 BVDSS = 700 V RDS(on) typ HFS8N70S ID = 7.0 A 700V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 9.1. Size:180K  semihow
 hfs8n60s.pdf pdf_icon

HFS8N70U

Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 9.2. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N70U

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

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Detailed specifications: HFS7N80, HFS830, HFS840, HFS8N60S, HFS8N60U, HFS8N65S, HFS8N65U, HFS8N70S, AO4407A, HFS8N80, HFS9N50, HFT1N60S, HFU630, HFW10N60S, HFW11N40, HFW12N60S, HFW50N06

Keywords - HFS8N70U MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.