HFS8N80 Specs and Replacement

Type Designator: HFS8N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO-220F

HFS8N80 substitution

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HFS8N80 datasheet

 ..1. Size:212K  semihow
hfs8n80.pdf pdf_icon

HFS8N80

Dec 2010 BVDSS = 800 V RDS(on) typ = 1.55 HFS8N80 ID = 8.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Unrivalled Gate Charge 35 nC (Typ ) Ex... See More ⇒

 9.1. Size:183K  semihow
hfs8n70s.pdf pdf_icon

HFS8N80

Dec 2012 BVDSS = 700 V RDS(on) typ HFS8N70S ID = 7.0 A 700V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 9.2. Size:180K  semihow
hfs8n60s.pdf pdf_icon

HFS8N80

Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 9.3. Size:307K  semihow
hfs8n65u.pdf pdf_icon

HFS8N80

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

Detailed specifications: HFS830, HFS840, HFS8N60S, HFS8N60U, HFS8N65S, HFS8N65U, HFS8N70S, HFS8N70U, 60N06, HFS9N50, HFT1N60S, HFU630, HFW10N60S, HFW11N40, HFW12N60S, HFW50N06, HFW5N50S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.