All MOSFET. HFS8N80 Datasheet

 

HFS8N80 Datasheet and Replacement


   Type Designator: HFS8N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-220F
 

 HFS8N80 substitution

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HFS8N80 Datasheet (PDF)

 ..1. Size:212K  semihow
 hfs8n80.pdf pdf_icon

HFS8N80

Dec 2010BVDSS = 800 VRDS(on) typ = 1.55 HFS8N80ID = 8.0 A800V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) Ex

 9.1. Size:183K  semihow
 hfs8n70s.pdf pdf_icon

HFS8N80

Dec 2012BVDSS = 700 VRDS(on) typ HFS8N70SID = 7.0 A700V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lo

 9.2. Size:180K  semihow
 hfs8n60s.pdf pdf_icon

HFS8N80

Dec 2006BVDSS = 600 VRDS(on) typ HFS8N60SID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS

 9.3. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N80

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

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Datasheet: HFS830 , HFS840 , HFS8N60S , HFS8N60U , HFS8N65S , HFS8N65U , HFS8N70S , HFS8N70U , AO4468 , HFS9N50 , HFT1N60S , HFU630 , HFW10N60S , HFW11N40 , HFW12N60S , HFW50N06 , HFW5N50S .

History: KNP3206A | K1109 | FQAF40N25 | 2SK1236 | HYG065N15NS1B6 | IPP80N04S4-04 | HYG065N07NS1B

Keywords - HFS8N80 MOSFET datasheet

 HFS8N80 cross reference
 HFS8N80 equivalent finder
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