HUF75343S3 MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75343S3
Marking Code: 75343S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 170 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-262AA
HUF75343S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75343S3 Datasheet (PDF)
huf75343s3 huf75343s3st.pdf
HUF75343G3, HUF75343P3, HUF75343S3,HUF75343S3SData Sheet March 200375A, 55V, 0.009 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance PSPICE and
huf75343.pdf
HUF75343G3, HUF75343P3, HUF75343S3SData Sheet December 200175A, 55V, 0.009 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance PSPICE and SABER Mode
huf75344a3.pdf
October 2007HUF75344A3tmN-Channel UltraFET Power MOSFET55V, 75A, 8mFeatures Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using FairchildSemiconductors innovative UItraFET process. This advanced RoHS compliantprocess technology achieves the lowest possibleon-resistance per silicon area, resulting in outstan
huf75345g3 huf75345p3 huf75345s3s huf75345s3 huf75345s3st.pdf
HUF75345G3, HUF75345P3, HUF75345S3SData Sheet December 200975A, 55V, 0.007 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models
huf75345g3 huf75345p3 huf75345s3s.pdf
MOSFET Power, N-Channel,UltraFET55 V, 75 A, 7 mWHUF75345G3, HUF75345P3,HUF75345S3Swww.onsemi.comDescriptionThese N-Channel power MOSFETs are manufactured usingVDSS RDS(ON) MAX ID MAXthe innovative UltraFET process. This advanced process technology55 V 7 mW 75 Aachieves the lowest possible on-resistance per silicon area, resultingin outstanding performance. This devic
huf75344g3 huf75344p3.pdf
HUF75344G3, HUF75344P3Data Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 75 A, 8 m 75A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABERprocess technology achieves the lowest possible on-Modelsresistance per silicon area, result
huf75344.pdf
HUF75344G3, HUF75344P3, HUF75344S3SData Sheet January 2000 File Number 4402.775A, 55V, 0.008 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- Thermal Impedance PSPICE and S
huf75345s3st.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor HUF75345S3STDESCRIPTIONDrain Current: I = 75A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPD040N03L
History: IPD040N03L
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