HUF75623S3ST MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75623S3ST
Marking Code: 75623S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 215 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: TO-263AB
HUF75623S3ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75623S3ST Datasheet (PDF)
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