All MOSFET. HUF75637S3 Datasheet

 

HUF75637S3 Datasheet and Replacement


   Type Designator: HUF75637S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-263AB
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HUF75637S3 Datasheet (PDF)

 ..1. Size:200K  fairchild semi
 huf75637s3 huf75637s3st.pdf pdf_icon

HUF75637S3

HUF75637P3, HUF75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN (FLANGE) Ultra Low On-ResistanceGATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice and S

 6.1. Size:201K  fairchild semi
 huf75637.pdf pdf_icon

HUF75637S3

HUF75637P3, HUF75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN (FLANGE) Ultra Low On-ResistanceGATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice and S

 7.1. Size:227K  fairchild semi
 huf75639s3st.pdf pdf_icon

HUF75637S3

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 7.2. Size:254K  fairchild semi
 huf75631sk8.pdf pdf_icon

HUF75637S3

HUF75631SK8Data Sheet December 20015.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.039, VGS = 10V5 Simulation Models1 - Temperature Compensated PSPICE and SABER 2Electrical Models34- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comSymbol

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Keywords - HUF75637S3 MOSFET datasheet

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