All MOSFET. HUF75829D3S Datasheet

 

HUF75829D3S Datasheet and Replacement


   Type Designator: HUF75829D3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-252AA
 

 HUF75829D3S substitution

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HUF75829D3S Datasheet (PDF)

 ..1. Size:191K  fairchild semi
huf75829d3st huf75829d3 huf75829d3s hufa75829d3s hufa75829d3st.pdf pdf_icon

HUF75829D3S

HUFA75829D3, HUFA75829D3SData Sheet December 200118A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.110, VGS = 10VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice

 8.1. Size:193K  fairchild semi
huf75852g3.pdf pdf_icon

HUF75829D3S

HUF75852G3Data Sheet December 200175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAIN(TAB) Pe

 8.2. Size:197K  fairchild semi
huf75842p3.pdf pdf_icon

HUF75829D3S

HUF75842P3, HUF75842S3SData Sheet December 200143A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAIN Ultra Low On-ResistanceDRAIN (FLANGE)GATE- rDS(ON) = 0.042, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Therm

 8.3. Size:259K  fairchild semi
huf75852g3 f085.pdf pdf_icon

HUF75829D3S

HUFA75852G3_F085Data Sheet December 201175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS CompliantDRAIN(TAB)Ordering InformationSymbolPART NUMBER PACKAGE BRA

Datasheet: HUF75623S3ST , HUF75631S3ST , HUF75631SK8T , HUF75637S3 , HUF75637S3ST , HUF75639S3ST , HUF75645S3ST , HUF75829D3 , IRF9540N , HUF75829D3ST , HUF75831SK8T , HUF75842S3S , HUF75842S3ST , HUF75925D3ST , HUF75939P3 , HUF76009D3ST , HUF76013D3S .

History: 2SK3018LT1

Keywords - HUF75829D3S MOSFET datasheet

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