HUF75842S3S MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75842S3S
Marking Code: 75842S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 43 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 144 nC
trⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 660 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO-263AB
HUF75842S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75842S3S Datasheet (PDF)
huf75842s3s huf75842s3st.pdf
HUF75842P3, HUF75842S3SData Sheet December 200143A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAIN Ultra Low On-ResistanceDRAIN (FLANGE)GATE- rDS(ON) = 0.042, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Therm
huf75842p3.pdf
HUF75842P3, HUF75842S3SData Sheet December 200143A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAIN Ultra Low On-ResistanceDRAIN (FLANGE)GATE- rDS(ON) = 0.042, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Therm
huf75852g3.pdf
HUF75852G3Data Sheet December 200175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAIN(TAB) Pe
huf75852g3 f085.pdf
HUFA75852G3_F085Data Sheet December 201175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS CompliantDRAIN(TAB)Ordering InformationSymbolPART NUMBER PACKAGE BRA
huf75831sk8t.pdf
HUF75831SK8Data Sheet December 20013A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.095, VGS = 10V Simulation Models5- Temperature Compensated PSPICE and SABER 1 Electrical Models2- Spice and SABER Thermal Impedance Models34- www.fairchildsemi.com Peak
huf75829d3st huf75829d3 huf75829d3s hufa75829d3s hufa75829d3st.pdf
HUFA75829D3, HUFA75829D3SData Sheet December 200118A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.110, VGS = 10VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice
huf75852g3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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