HUF76419D3ST
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76419D3ST
Marking Code: 76419D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037
Ohm
Package:
TO-252AA
HUF76419D3ST
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76419D3ST
Datasheet (PDF)
..1. Size:196K fairchild semi
huf76419d3st.pdf
HUF76419D3, HUF76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER G
3.1. Size:197K fairchild semi
huf76419d3s.pdf
HUF76419D3, HUF76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER G
6.1. Size:321K fairchild semi
huf76419s f085.pdf
April 2013HUF76419S3ST_F085N-Channel Power Trench MOSFET60V, 29A, 35m DDFeatures Typ rDS(on) = 26.7m at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSMOSFET Maximum Ratings TJ = 25C unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain to Source Voltage 60 V
6.2. Size:213K fairchild semi
huf76419s3st.pdf
HUF76419P3, HUF76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect
6.3. Size:220K fairchild semi
huf76419p3-s3s.pdf
HUF76419P3, HUF76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect
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