HUF76429D3ST Specs and Replacement

Type Designator: HUF76429D3ST

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 134 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-252AA

HUF76429D3ST substitution

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HUF76429D3ST datasheet

 ..1. Size:285K  fairchild semi
 huf76429d3st.pdf pdf_icon

HUF76429D3ST

HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 4.1. Size:288K  fairchild semi
 huf76429d3-s.pdf pdf_icon

HUF76429D3ST

HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 5.1. Size:346K  fairchild semi
 huf76429d f085.pdf pdf_icon

HUF76429D3ST

HUFA76429D3ST_F085 Data Sheet September 2010 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features Ultra Low On-Resistance JEDEC TO-252AA - rDS(ON) = 0.023 , VGS = 10V - rDS(ON) = 0.027 , VGS = 5V DRAIN (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models GATE - Spice and SABER Thermal Im... See More ⇒

 6.1. Size:206K  fairchild semi
 huf76429s3st.pdf pdf_icon

HUF76429D3ST

HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

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Detailed specifications: HUF76009D3ST, HUF76013D3S, HUF76013D3ST, HUF76013P3, HUF76145S3, HUF76407D3ST, HUF76419D3ST, HUF76419S3ST, TK10A60D, HUF76429S3ST, HUF76437S3ST, HUF76439S3ST, HUF76445S3ST, HUF76609D3ST, HUF76619D3ST, HUF76629D3ST, HUF76633S3ST

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