HUFA75307P3 Specs and Replacement
Type Designator: HUFA75307P3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-220AB
HUFA75307P3 substitution
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HUFA75307P3 datasheet
hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf
HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs 15A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models... See More ⇒
hufa75307t3st.pdf
HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC... See More ⇒
hufa75307t3st.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
hufa75309t3st.pdf
HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE ... See More ⇒
Detailed specifications: HUF76445S3ST, HUF76609D3ST, HUF76619D3ST, HUF76629D3ST, HUF76633S3ST, HUFA75307D3, HUFA75307D3S, HUFA75307D3ST, 18N50, HUFA75309D3, HUFA75309D3S, HUFA75309P3, HUFA75309T3ST, HUFA75321D3, HUFA75321D3ST, HUFA75321P3, HUFA75321S3S
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