All MOSFET. HUFA75309P3 Datasheet

 

HUFA75309P3 MOSFET. Datasheet pdf. Equivalent

Type Designator: HUFA75309P3

SMD Transistor Code: 75309P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO-220AB

HUFA75309P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUFA75309P3 Datasheet (PDF)

1.1. hufa75309t3st.pdf Size:171K _update_mosfet

HUFA75309P3
HUFA75309P3

HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE®

1.2. hufa75309d3 hufa75309d3s hufa75309p3.pdf Size:215K _update_mosfet

HUFA75309P3
HUFA75309P3

HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs • 19A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 2.1. hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Size:215K _update_mosfet

HUFA75309P3
HUFA75309P3

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs • 15A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

2.2. hufa75307t3st.pdf Size:174K _fairchild_semi

HUFA75309P3
HUFA75309P3

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090? manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowe

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
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